Defect Annealing in Copper around Stage III
Abstract
Stage-III recovery in copper after electron and proton irradiation and after quenching is investigated by observation of perturbed γγ angular correlations. Two different types of intrinsic defects can be trapped at the radioactive impurities. The identity of the defects trapped after different damaging conditions proves that the recovery in stage III is mainly caused by two types of mobile defects, a monovacancy and a small vacancy complex, the latter being more mobile than the monovacancy.
Department
Physics
Publication Date
11-1-1978
Journal Title
Physical Review Letters
Publisher
APS Physics
Digital Object Identifier (DOI)
Document Type
Article
Recommended Citation
Th. Wichert, M. Deicher, O. Echt and E. Recknagel, Defect Annealing in Copper around Stage III, Phys. Rev. Lett. 41 (1978) 24
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