Date of Award
Program or Major
Master of Science
John R LaCourse
An integrated high voltage bias driver for a Radio Frequency Micro-Electro-Mechanical System (RF MEMS) microswitch is proposed. The design and implementation in a 0.7mum integrated circuit process with high and low voltage transistors is shown along with tested results. High voltage Double-Diffused Metal Oxide Semiconductor (DMOS) transistors in combination with low voltage digital logic provide a non-linear solution that achieves rise and fall times of 1mus while keeping power use to a minimum. System design and tradeoffs are presented for alternate approaches and combinations as well as future integration with Direct Current--Direct Current (DC-DC) voltage conversion and an internally generated clock.
Brandt, James A., "High voltage bias waveform generator for an RF MEMS microswitch" (2008). Master's Theses and Capstones. 355.