Surface induced asymmetry of acceptor wave functions
Measurements of the local density of states of individual acceptors in III-V semiconductors show that the symmetry of the acceptor states strongly depends on the depth of the atom below a (110) surface. Tight-binding calculations performed for a uniformly strained bulk material demonstrate that strain induced by the surface relaxation is responsible for the observed depth-dependent symmetry breaking of acceptor wave functions. As this effect is strongest for weakly bound acceptors, it explains within a unified approach the commonly observed triangular shapes of shallow acceptors and the crosslike shapes of deeply bound acceptor states in III-V materials.
Physical Review Letters
AMERICAN PHYSICAL SOCIETY
Digital Object Identifier (DOI)
Celebi, C. C.; Garleff, J. K.; Silov, A. Yu; Yakunin, A. M.; Koenraad, P. M.; Van Roy, W.; Tang, J. M.; and Flatte, M. E., "Surface induced asymmetry of acceptor wave functions" (2010). Physical Review Letters. 131.
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