X-ray absorption spectroscopy study at the SiK-edge of tungsten carbide-silicon carbide thin films
Abstract
X-ray absorption spectroscopy (XAS) has been used to determine the compositional and structural nature of the phases formed in sputter-deposited W-Si-C films. The Si K-edge was examined to determine the presence and crystallinity of the SiC phase. For a film composition of 22% SiC, the XAS results show that there is at best only a minor amount of crystallization of SiC when deposited ;at 350 degrees C, but crystallization becomes more definitive at 600 degrees C. For a film with 29% SiC deposited at 350 degrees C, no crystalline SiC was detected. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Department
Mechanical Engineering
Publication Date
6-1-2007
Journal Title
Scripta Materialia
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Digital Object Identifier (DOI)
10.1016/j.scriptamat.2007.03.001
Document Type
Article
Recommended Citation
J.E. Krzanowski, S. Palacin, A Gutierrez, F. Schafers, M. Mertin, J.L. Endrino and L.Soriano, "X-ray Absorption Spectroscopy Study at the Si K-edge for Tungsten Carbide – Silicon Carbide Thin Films," Scripta Metall., v. 56, pp. 1011-1014 (2007).
Rights
Copyright © 2007, Elsevier