Preferential growth of Ti and TiN films on Si(111) deposited by pulsed laser deposition
Ti and TiN films have been grown by pulsed laser deposition (PLD from a titanium target in reactive gas atmospheres of 1 mTorr Ar and IO mTorr N-2, respectively. The films were deposited onto Si(111) substrates at temperatures of 200, 400 and 600 degreesC. X-ray diffraction (XRD) revealed that the TiN films exhibited a strong (100) orientation at all substrate temperatures. However, films deposited at 200 degreesC showed only (100) oriented grains, while those deposited at 400 and 600 degreesC had an additional small component of grains with alternate orientations. Ti films shelved strong (100) at 200 and 400 degreesC, but shifted to strong (002) at 600 degreesC. The deposited films exhibited densely-packed grains, with smooth and uniform structures. X-ray photoelectron spectroscopy (XPS) analysis of the films showed 99.5% Ti in the Ti films and 50% Ti, 45% N in TiN films, indicating stoichiometric composition in the deposited films. (C) 2001 Elsevier Science B.V. All rights reserved.
Applied Surface Science
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Digital Object Identifier (DOI)
Phani, A. R. and Krzanowski, James E., "Preferential growth of Ti and TiN films on Si(111) deposited by pulsed laser deposition" (2001). Applied Surface Science. 13.
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