Title

X-ray absorption spectroscopy study at the SiK-edge of tungsten carbide-silicon carbide thin films

Abstract

X-ray absorption spectroscopy (XAS) has been used to determine the compositional and structural nature of the phases formed in sputter-deposited W-Si-C films. The Si K-edge was examined to determine the presence and crystallinity of the SiC phase. For a film composition of 22% SiC, the XAS results show that there is at best only a minor amount of crystallization of SiC when deposited ;at 350 degrees C, but crystallization becomes more definitive at 600 degrees C. For a film with 29% SiC deposited at 350 degrees C, no crystalline SiC was detected. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Publication Date

6-1-2007

Journal Title

Scripta Materialia

Publisher

PERGAMON-ELSEVIER SCIENCE LTD

Digital Object Identifier (DOI)

10.1016/j.scriptamat.2007.03.001

Document Type

Article

Rights

Copyright © 2007, Elsevier